This low-budget, high-temperature gas-surface reactor system is developed by M Plus Scientific. It consists of 1) a quartz reactor tube coupled to a quick sample-introduction chamber, 2) a proprietory fast-response and high-intensity radiative furnace, and 3) a progrommable power/temperature controller. The high-intensity furnace enables the spike anneal of semiconduction wafer chips for post-implant dopant activation. The miniature load lock chamber facilitates the rapid wafer sample motion between two extreme temperature regions without breaking the vacuum or the gas ambient. The programmable controller is interfaced to a computer via a USB port. A commercial high-temperature tubular furnaces (chamber ID=1~1.5 inches) can also be used for heating.

When gaseous reactants are programmably supplied to the reactor system and a proper pressure is maintained, many semiconductor wafer thermal processes such as rapid thermal anneal (RTA), oxidation (RTO), oxynitridation (RTON), nitridation (RTN), silicidation (metalization) and chemical vapor deposition (RTCVD, MOCVD) can be investigated and optimized. When evacuated with a vacuum pumping system, it can perform low-pressure chemical vapor deposition (LPCVD) and atomic layer deposition (ALD) for thin film growth. If a micro-wave cavity or a radio-frequence (RF)electrode is coupled to the quartz reactor tube, romote-plasma surface processing can be investigated. Long-time (several hours) thermal processing can be conducted. It is suitable for the general experimental study of isothermal or temperature-programmed gas-surface reactions in a wide temperature range (25°C to 1200°C) and at the atmospheric pressure or lower pressures. The chemical composition of ambient gas can be programmably varied and accurately controlled in real-time using mass flow controllers or pulsed valves under computer control.

When used in combination with other thin film diagnostic techniques for electrical and chemical charaterization, this system is a powerful and economical tool for the nano-technology process development, materials science, and the kinetic and mechanism study of numerous gas-surface reactions associated with electronic device fabrication.

Features:
• Aluminum alloy construction. Viton elastomer seals.
• Wide reaction temperature range from ambient up to 1200°C.
• Magnetically-driven quartz sample arm (x-direction).
• Magnetical-drive sample tweezers (y-linear motion and rotation along y-axis).
• Substrate sample holder for up to 14 samples. Wafer Sample Size: L=10~20 mm, W=8~12 mm, T=0.2~1 mm.
• 2 perpenticular view port and 1 NW40 compatible free ports for sample introduction, electric and pumping connection.
• Close-ended reaction tube or open-ended reaction tube with an OD=1/4" Swagelok gas inlet.
• Reactor dimmension: OD=1 inch, Length = 12 to 18 inches
• Pressure: Vacuum to 1 atmosphere
• PC-programmable (USB protocol) heating power and high-speed thermocouple temperature sensing. Visual Basic programmable.
• Redundant A/D and D/A channels for up to 3 mass flow controllers (MFC), and redundant digital I/O channels for up to 3 pulsed valves.
• The fast-response (~1 sec time constant) and high-intensity radiative furnace allows the real-time temperature programming of a surface sample.
• Typical temperature ramp time constant (Si wafer)of 10 sec for 600°C, and 6 sec for 1100°C when a commecial tube furnace is used.

Designed For The Scientific R&D Communities.

Operation Mode:
1. Manual power level control.
2. Local PID + fussy logic control.
3. Remote computer programmed control via a USB cable.

122105003Maximun Current @110 VAC: 20 A30 A

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